This standard specifies the analysis method principles, environmental condition indicators, instruments, samples, analysis and testing, result reports, instrument maintenance, and safety precautions of scanning electron microscopy (SEM). This standard is applicable to the analysis of micro morphology, micro zone composition, and structure using various scanning electron microscopes. The following normative references are essential for the application of this document. For dated references, only the dated version applies to this document. For undated references, the latest version (including all modification orders) applies to this document. GB/T 23414-2009 Microbeam Analysis Scanning Electron Microscopy, Terminology GB/T 13298-2015 Methods for Testing Metal Microstructures GB/T 17359-2012 Microbeam Analysis Energy Harmonic Method Quantitative Analysis Youzhi GB/T 19501-2013 Microbeam Analysis Electron Backscatter Diffraction Analysis Method General Rule 3 Terms and Definitions The following terms and definitions apply to this document. 3.1 Secondary electron: The extranuclear electrons of atoms in the sample are bombarded by incident electrons and detach from the atom. When their energy exceeds the work released from the material surface, they escape from the sample surface. This type of electron is a secondary electron. The energy of secondary electrons ranges from 6-5o eV, occurring in the depth range from the sample surface to 5-10 nm. 3.2 Backscattered electron The electron that collides with the atomic nucleus and is reflected from the solid sample is generated in the depth range of 100 nm - l um from the sample surface. Backscattered electrons include elastic and inelastic backscattered electrons, usually represented by BSE
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