This standard specifies the basic principles of electrical parameter testing methods for semiconductor integrated circuit time-based circuits (hereinafter referred to as devices or time-based circuits). The static and dynamic parameter testing of time-based circuits and CMOS circuits can refer to GB 3834 "Basic Principles of Testing Methods for Semiconductor Integrated Circuit CMOs Circuits". General requirement 1.1 Unless otherwise specified, the range of temperature deviation from the specified value at the environmental or reference point during the testing period shall comply with the detailed specifications of the device. During the testing period, the electrical parameters applied to the tested device should comply with the detailed specifications of the device. During the testing period, external interference should be avoided from affecting the testing accuracy. The testing error caused by the testing equipment should comply with the detailed specifications of the device. 1.4 When the tested device is connected or disconnected from the testing system, the service limit conditions of the device should not be exceeded. If required, the power supply should be connected in the order specified in the detailed device specifications. During the testing period, the tested device should be connected to the peripheral circuit and compensation network specified in the detailed specifications of the device. If the electrical parameter values are determined by calculating the results of several steps of testing, the time interval between these tests should be as short as possible. 1.8 The parameter definitions of this standard are given in accordance with the truth table specified below. If the tested device does not comply with this regulation, the test circuit can be adjusted accordingly
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