1.1 Topic Content: This standard specifies the general test methods for semiconductor discrete devices (hereinafter referred to as devices), including basic environmental tests for damage resistance under military conditions, mechanical performance tests, and electrical characteristic tests. 1.2 Scope of Application This standard is applicable to military semiconductor discrete devices. 1.3 Application Guide 1.3.1 stipulates that the test conditions in the laboratory should be appropriate so that the test results are equivalent to the results of on-site use, and the test results should be reproducible. But this cannot be understood as the test conditions being completely equivalent to the actual working conditions in a certain region. This is because only the actual working tests in a certain region are the actual working tests in that region. When using a standard to describe test methods with similar properties in various general semiconductor device specifications, these methods can be kept unified, thus fully utilizing equipment, facilities, and saving labor hours. To achieve this goal, it is necessary to make each universal test method applicable to multiple devices. 1.3.2 When referencing the test methods of this standard in detailed specifications, the standard number, test method number, and the details that should be specified in the referenced test methods should be indicated. Reference GB3131-88 Tin lead solder GB4023-86 Semiconductor discrete devices Part 2: Rectifier diodes GB4024-83 Test methods for reverse blocking triode thyristors GB4586-94 Semiconductor devices Discrete devices Part 8: Field effect transistors GB4587-94 Semiconductor devices Discrete devices and integrated circuits Part 7: Bipolar transistors GB6570-86 Microwave diode test methods GB6571-94 Semiconductor devices Discrete devices Part 3: Signal (Including switches) and adjusting diodes GB9491-88 Liquid soldering flux for soldering (rosin based) GB11499-89 Text symbols for discrete semiconductor devices GB12300-90 Test methods for safe working areas of power transistors GB33A-97 General specification for discrete semiconductor devices GIB3604-96 Test methods for electronic and electrical components GJB762.1-89 Radiation hardening test methods for semiconductor devices GJB762.3-89 Radiation hardening test methods for semiconductor devices r Instantaneous beat irradiation test
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