1.1 Topic Content: This standard specifies the general test methods for semiconductor discrete devices (hereinafter referred to as devices), including basic environmental tests for damage resistance under military conditions, mechanical performance tests, and electrical characteristic tests. 1.2 Scope of Application This standard is applicable to military semiconductor discrete devices. 1.3 Application Guide 1.3.1 stipulates that the test conditions in the laboratory should be appropriate, so that the test results are equivalent to the results of on-site use, and the test results should be reproducible. But this cannot be understood as the experimental conditions being completely equivalent to the actual working conditions in a certain region, because only the actual working experiments in a certain region are the actual working experiments in that region. When using a standard to describe test methods with similar properties in various general semiconductor device specifications, these methods can be kept unified, thereby fully utilizing equipment, facilities, and saving time. To achieve this goal, it is necessary to make each universal test method applicable to multiple devices. 1.3.2 When referencing the test methods of this standard in detailed specifications, the standard number, test method number, and the details that should be specified in the referenced test methods should be indicated. Reference GB3131-88 Tin lead solder GB4023-86 Semiconductor discrete devices Part 2: Rectifier diodes GB4024-83 Test methods for reverse blocking triode thyristors GB4586-94 Semiconductor devices Discrete devices Part 8: Field effect transistors GB4587-94 Semiconductor devices Discrete devices and integrated circuits Part 7: Bipolar transistors GB6570-86 Test methods for microwave diodes GB6571-94 Semiconductor devices and discrete devices Part 3: Signal (including switch) and adjustment diode