Electronics
Semiconductor diode (voltage regulator, TVS, TSS, silicon bridge, silicon stack, Schottky diode) det
Semiconductor diode (voltage regulator, TVS, TSS, silicon bridge, silicon stack, Schottky diode) det
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Semiconductor diode (voltage regulator, TVS, TSS, silicon bridge, silicon stack, Schottky diode) det

Scope of use

This standard is applicable to military semiconductor discrete devices

Application Guidelines

It is stipulated that the test conditions in the laboratory should be appropriate, so that the test results are equivalent to the results of on-site use, and the test results should be reproducible.

. But this cannot be understood as the experimental conditions being completely equivalent to the actual working conditions in a certain region, because only the actual working experiments in a certain region are the actual working experiments in that region. When using a standard to describe test methods with similar properties in various general semiconductor device specifications, these methods can be kept unified, thereby fully utilizing equipment, facilities, and saving time. To achieve this goal, it is necessary to make each universal test method applicable to multiple devices. When referencing the test methods of this standard in detailed specifications, the standard number, test method number, and the details that should be specified in the referenced test methods should be indicated

Reference

GB3131-88

Tin lead solder

GB4023-86

Discrete semiconductor devices Part 2: Rectifier diodes

GB4024-83

Test methods for reverse blocking triode thyristors in semiconductor devices

GB4586-94

Discrete semiconductor devices Part 8: Field effect transistors

GB4587 94

Semiconductor devices Part 2: Bipolar transistors

GB6570-8 6

Test methods for microwave diodes

GB6571-94

Semiconductor devices Discrete devices Part 3: Signal (including switches) and adjustment diodes

GB9491-88

Liquid soldering flux (rosin based) for soldering

GB11499-89

Text symbols for semiconductor discrete devices

GB12300-90

Test methods for safe working area of power transistors

GJB33A-97

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