With the rapid progress and development of semiconductor integrated circuit manufacturing technology, the volume of ultra large scale integrated circuits marked by silicon based single chip digital technology is constantly shrinking, and the circuit structure and manufacturing process are becoming increasingly complex. Its reliability is also increasingly affected by process errors and related factors. Reliability engineering must utilize current modern science and technology, systematically consider product functions, use specialized technical means, reduce product failure rates, and ultimately ensure good system operation. In wafer level reliability testing of integrated circuits, the most commonly used testing categories are thermal current injection testing, electromigration testing, and other related testing items

Gate oxide layer testing technology and data processing methods:

In the process of manufacturing integrated circuits, the gate oxide layer plays a crucial role. As the scale of integrated circuits continues to expand, its thickness also continues to increase. At the same time, the thickness of the decreasing device volume is also continuously decreasing.

. Due to the critical position of the gate oxide layer, its reliability has also received great attention. Among the common problems encountered are the dielectric breakdown and defect density of the gate oxide layer. Reliability testing for gate oxide layers typically involves conducting slope voltage and breakdown tests on the contact medium at the same time node

1. Slope voltage test

In reliability testing, slope voltage test adds a linear slope voltage to the gate until the voltage breaks through the oxide layer.

. Unlike ramp voltage testing, ramp current testing involves adding a certain exponential ramp current to the gate until the oxide layer is broken down. Both of these testing methods measure the defect density of the gate oxide layer. For example, in general, the testing of slope voltage is carried out within a certain voltage standard range. If the voltage when the voltage breaks through the oxide layer is smaller than the set voltage standard, it can be considered that there are defects in the oxide layer and further confirm that the oxide layer is invalid. In the JESD35 standard, the yield formula based on Poisson distribution can be used to calculate the corresponding defect density: Y=e-DoA, where the yield is represented by Y, which is the ratio of the effective sample to the total test sample, the area of the tested sample is represented by A, and the defect density is represented by Do. After extensive testing of the cost through ramp current and voltage, the yield value can be obtained through calculation, and the defect density can be calculated using the test sample area. Once the defect density does not meet the set standard, the test is deemed to have failed

2. Experiment on dielectric breakdown

Time dependent dielectric breakdown is also a dielectric breakdown experiment. The testing step is to add an intrinsic smaller than the gate oxide layer to the gate, which cannot cause intrinsic breakdown. However, the oxide layer has certain defects during the process of electrical stress, and in this case, the breakdown phenomenon will occur after a period of time. In the process of evaluating the reliability testing of integrated circuits, the breakdown of shed oxygen medium at the same time is the main limiting factor. Generally speaking, the electric field of silicon oxide exceeds the limit, and the occurrence of breakdown phenomenon is only caused by the accumulation of charges caused by excessive current. At present, the breakdown of the oxide layer is mainly divided into two stages: construction wear and breakdown. During the construction wear stage, the defects in the silicon dioxide interface under electrical stress operation will continuously accumulate. When the equivalent change causes mass, some defects will first reach the critical value and enter the breakdown stage. Based on the dual reaction of electric heating, the oxide layer will be quickly breakdown. So the time and cycle of the greenhouse oxide layer breakdown test are determined by the duration of the first stage