This standard specifies the grades, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, etc. of n-type, semi insulating (Si), p-type phosphated Gu single crystal ingots and single crystal wafers. This standard is applicable to phosphated Gu single crystal materials (hereinafter referred to as single crystals) prepared by high-pressure liquid sealed Czochralski method (HP-LEC). The clauses in the following documents are referred to as provisions of this standard through normative references. For dated reference documents, all subsequent amendments (excluding corrected content) or revisions are not applicable to this standard. However, parties to agreements based on this standard are encouraged to study whether the latest versions of these documents can be used. For undated references, the latest version applies to this standard. GB/T 1550 Test Methods for Conductivity Types of Non intrinsic Semiconductor Materials GB/T 1555 Measurement Methods for Crystal Orientation of Semiconductor Monocrystals GB/T 2828 (All Parts) Count sampling inspection procedure GB/T 4326 Measurement methods for Hall mobility and Hall coefficient of non intrinsic semiconductor single crystals GB/T 6618 Test method for thickness and total thickness change of silicon wafers GBT 13387 Measurement method for reference plane length of electronic materials chip SJ/T 3244.1 Measurement method for Hall mobility and carrier concentration of GaAs and InP materials SJ/T 3245 Measurement method for dislocation density of phosphated single crystals SJ/T 3249.1 Resistance of semi insulating arsenide and phosphated single crystal materials Rate testing method
Function of testing report:
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1. Telephone communication and confirmation of requirements
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1. The testing industry is fully covered, meeting different testing needs
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4. Free initial testing, with no testing fees charged
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